Physics for Electronics Engineering: Unit III: Semiconductors and Transport Physics

Hall effect in n-type semiconductor

The electrical conductivity measurements are not sufficient for the determination of number of charge carriers and their mobilities.

HALL EFFECT

i. The electrical conductivity measurements are not sufficient for the determination of number of charge carriers and their mobilities.

ii. Moreover, these measurements do not indicate whether current conduction is due to electrons or holes.

iii. Hence, it is very difficult to distinguish between p-type and n-type semiconductors. Besides, the electrical conductivity measurements do not give any information about the sign of the majority (p type or n type) charge carriers.

iv. Therefore, Hall effect is used to distinguish between two types of charge carriers (electrons and hole). It also provides information about the sign of charge carriers.

Statement

When a conductor carrying a current (I) is placed perpendicular to a magnetic field (B), (B), a potential difference is produced inside the conductor in a direction perpendicular to both current and magnetic field. (Fig. 3.15)

This phenomenon is known as Hall effect. The voltage thus generated is called Hall voltage.


Hall effect in n – type semiconductor

Consider a n-type semiconductor in the form of a rectangular slab. In this slab, the current flows in X - direction and magnetic field B is applied in Z-direction. Due to Hall effect, voltage is developed along Y - direction as shown in fig. 3.16.


The current flow is entirely due to the flow of electrons moving from right to left along X-direction.

When a magnetic field (B) is applied in Z-direction, then the electrons moving with velocity v experience a downward force.

Downward force experienced by the electrons = Bev .................(1)

This downward force deflects the electrons in downward direction. Hence, there is an accumulation of negative charge (electrons) on the bottom face of the slab (fig 3.17).


It causes bottom face to be more negative with respect to top face.

Now, a potential difference is developed between top and bottom faces of the slab.

This potential difference produces an electric field EH in negative Y- direction. It is called Hall field.

This electric field develops a force (Lorentz force). This force is acting in the upward direction on each electron.

Upward force acting on each electron = eEH .................(2)

At equilibrium, downward force balances upward force.

The current density (Jx) along X-direction is related to velocity v as-

Jx = - nev .................(4)

where n is concentration electrons.

Substituting eqn (5) in eqn (3), we have



RH is a constant and it is known as Hall coefficient.

The negative sign indicates that the electric field is developed in negative Y- direction.

Physics for Electronics Engineering: Unit III: Semiconductors and Transport Physics : Tag: : - Hall effect in n-type semiconductor


Physics for Electronics Engineering: Unit III: Semiconductors and Transport Physics



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