Biasing
Subject and UNIT: Electronic Devices and Circuits: Unit II: Amplifiers
The process of giving proper supply voltages and resistances for obtaining the desired operating point is known as biasing.
Classification of Amplifiers
Subject and UNIT: Electronic Devices and Circuits: Unit II: Amplifiers
An amplifier is defined as the device which increases the magnitude of the input signal and produces a larger electrical output. The amplifier needs a source of energy for amplification from battery or de source and filter combination.
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
Anna University Important Two mark and Review questions in Semiconductor Devices
Construction, Operation
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
The UJT consists of a bar of lightly doped n-type silicon with a block of P-type material on one side
Semiconductor Devices
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
MOSFET is the common term for the Insulated Gate Field Effect Transistor (IGFET). There are two basic terms of MOSFET (i) Enhancement MOSFET and (ii) Depletion MOSFET.
Types, Junction Field Effect Transistor (JFET) | Semiconductor Devices
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
The FET is a device in which the flow of current through the conducting region is controlled by an electric field, hence the name Field Effect Transistor (FET). As current conduction is only by majority carriers, FET is said to be a unipolar device.
Common Base, Common Emitter, Common Collector | Configuration
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
When a transistor is to be connected in a circuit, one terminal is used as an input terminal, the other terminal is used as an output terminal and the third terminal is common to the input and output.
Semiconductor Devices
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
In the active region of the transistor, the emitter is forward biased and the collector is reverse biased.
Semiconductor Devices
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
As the base is lightly doped with P-type material the number of holes in the base region is very small and hence the number of electrons that combine with holes in the p-type base region is also very small.
Construction of PNP and NPN Transistor
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
A Bipolar Junction Transistor (BJT) has three layers of semiconductor material. These are arranged either in npn sequence or in pnp sequence and each of the three layers has a terminal.
Application with Solved Problems | Zener Diode
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
When reverse bias is applied, the voltage across the diode remains constant and, the current through the diode increases.
Zener breakdown, Avalanche breakdown
Subject and UNIT: Electronic Devices and Circuits: Unit I: Semiconductor Devices
There are two types of mechanisms due to which breakdown occurs. They are i. Zener breakdown ii. Avalanche breakdown